ESDA6V8AV5 will semiconductor ltd. 1 may, 2012 - rev.2.1 ESDA6V8AV5 4-line, low-capacitor, uni-directional transient voltage suppressors descriptions the ESDA6V8AV5 is a transient voltage suppressors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). it is designed to replace multiplayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. the ESDA6V8AV5 was past esd transient voltage up to 8kv (contact) according to iec61000-4-2 and withstand peak current up to 3a for 8/20us pulse according to iec61000-4-5. the ESDA6V8AV5 is available in sot-553 package. standard products are pb-free and halogen-free. features working voltage : 5v peak power (tp=8/20us) : 36w esd protection iec61000-4-2 (contact) : 8kv iec61000-4-2 (air) : 15kv low leakage current small package applications mobile phone pad notebook stb lcd tv digital camera other electronics equipments http//:www.willsemi.com sot-553 pin configuration (top view) 6h = device code * = month code (a~z) marking order information device package shipping ESDA6V8AV5-5/tr sot-553 3000/tape&reel 123 4 5 i/o1 gnd i/o2 i/o3 i/o4 123 4 5 6h
ESDA6V8AV5 will semiconductor ltd. 2 may, 2012 - rev.2.1 absolute maximum ratings electronics characteristics (ta=25 o c, unless otherwise noted) 8/20us waveform iec61000-4-2 waveform parameter symbol rating unit peak pulse power (tp=8/20us) ppk 36 w peak pulse current (tp=8/20us) ipp 3 a esd voltage iec61000-4-2 (contact) 8 kv esd voltage iec61000-4-2 (air) v esd 15 kv operation junction temperature t j 150 o c lead temperature t l 260 o c storage temperature tsg -55~150 o c parameter symbol condition min. typ. max. unit reveres maximum working voltage v rwm i r =1ua 5 v reveres leakage current i r v rwm =5v 1 ua reveres breakdown voltage v br i t =1ma 6.2 6.8 7.5 v forward voltage v f i f =10ma 0.4 0.8 1.2 v ipp=1a tp=8/20us 9 v clamping voltage v c ipp=3a tp=8/20us 12 v junction capacitance c j i/o to gnd, v r =0v, f=1mhz 16 20 pf junction capacitance c j i/o to i/o v r =0v, f=1mhz 8 10 pf t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us)
ESDA6V8AV5 will semiconductor ltd. 3 may, 2012 - rev.2.1 t ypical characteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time esd clamping (iec61000-4-2 +8kv contact) capacitance vs. reveres voltage power derating vs. temperature esd clamping (iec61000-4-2 -8kv contact) 01234 0 4 8 12 16 20 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 012345 6 8 10 12 14 16 18 20 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c)
ESDA6V8AV5 will semiconductor ltd. 4 may, 2012 - rev.2.1 package outline dimensions sot-553 dimensions in millimeter symbol min. typ. max. a 0.525 0.563 0.600 a1 0.000 0.025 0.050 e 0.450 0.500 0.550 c 0.090 0.125 0.160 d 1.500 1.600 1.700 b 0.170 0.220 0.270 e1 1.100 1.200 1.300 e 1.500 1.600 1.700 l 0.100 0.200 0.300 7 e ref
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